2013/04/18 ver.1 page 1 sp n65t10 n-channel enhancement mode mosfet description applications the SPN65T10 is the n-channel enhancement mod e power field effect transistor which is pr oduced using high cell density dmos trench technology. this high density process is especially tailored to minimize on- state resistance. these devices are particularly suitable for synchronous rectifier application, notebook computer power management and other battery powered circuits . dc/dc converter load switch smps secondary side synchronous rectifier features pin configuration to-220-3l to-263-2l to-262-3l 100v/68a, r ds(on) = 14m ? @v gs = 10v super high density cell design for extremely low rds (on) exceptional on-resistance and maximum dc current capability to-220-3l/to-263-2l/to-262-3l package design part marking to-220-3l to-263-2l to-262-3l
2013/04/18 ver.1 page 2 sp n65t10 n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 d drain 3 s source ordering information part number package part marking SPN65T10t220tgb to-220-3l SPN65T10 SPN65T10t262rgb to-263-2l SPN65T10 SPN65T10k262tgb to-262-3l SPN65T10 SPN65T10t220tgb : tube ; pb C free ; halogen - free SPN65T10t262rgb : tape&reel ; pb C free ; halogen - free SPN65T10k262tgb : tube ; pb C free ; halogen - free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 100 v gate Csource voltage v gss 20 v continuous drain current(t j =150 ) t a =25 i d 68 a t a =70 45 pulsed drain current i dm 260 a power dissipation t a =25 p d 125 w t a =70 3.35 avalanche energy with single pulse ( tj=25 , l = 1mh , i as = 22a , v ds =100v. ) eas 240 mj operating junction temperature t j -55/150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 62.5 /w
2013/04/18 ver.1 page 3 sp n65t10 n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 100 v gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 2.0 4.0 gate leakage current i gss v ds =0v,v gs =20v 100 na zero gate voltage drain current i dss v ds =100v,v gs =0v 10 ua v ds =80v,v gs =0v t j = 150 c 100 drain-source on-resistance r ds(on) v gs = 10v,i d =45a 14 m ? diode forward voltage v sd i s =45a,v gs =0v 1.3 v dynamic total gate charge q g v ds =80v,v gs =4.5v i d = 30a 57 nc gate-source charge q gs 12 gate-drain charge q gd 17.5 input capacitance c iss v ds =25v gs =0v f=1mhz 2920 pf output capacitance c oss 261 reverse transfer capacitance c rss 162 turn-on time t d(on) v dd =50v,r l =1.6 ? i d 30a,v gen =10v r g =10 ? 15 ns t r 13 turn-off time t d(off) 55 t f 21
2013/04/18 ver.1 page 4 sp n65t10 n-channel enhancement mode mosfet typical characteristics
2013/04/18 ver.1 page 5 sp n65t10 n-channel enhancement mode mosfet typical characteristics
2013/04/18 ver.1 page 6 sp n65t10 n-channel enhancement mode mosfet to-220-3l package outline millimeter inch symbol min max min max a 4.4 4.6 0.173 0.181 a1 2.23 2.53 0.088 0.100 b2 0.75 0.85 0.030 0.033 b1 1.17 1.42 0.046 0.056 c2 0.4 0.6 0.016 0.024 c1 1.2 1.4 0.047 0.055 d 9.85 10.15 0.388 0.400 e 8.96 9.46 0.353 0.372 e1 15.5 15.95 0.610 0.628 e 2.54ref 0.1ref e1 5.08ref 0.2ref f 2.7 2.9 0.106 0.114 h 0 0.3 0.000 0.012 l 12.7 13.65 0.500 0.537 l1 3.2 0.126
2013/04/18 ver.1 page 7 sp n65t10 n-channel enhancement mode mosfet to-263-2l package outline
2013/04/18 ver.1 page 8 sp n65t10 n-channel enhancement mode mosfet to-262-3l package outline millimeter inch symbol min max min max a 4.4 4.8 0.173 0.189 b 0.76 1 0.030 0.039 d 8.6 9 0.339 0.354 c 0.36 0.5 0.014 0.020 e 9.8 10.4 0.386 0.409 c2 1.25 1.45 0.049 0.057 b2 1.17 1.47 0.046 0.058 l 13.25 14.25 0.522 0.561 e 2.54ref 0.1ref l2 1.27ref 0.05ref
2013/04/18 ver.1 page 9 sp n65t10 n-channel enhancement mode mosfet information provided is alleged to be exact and con sistent. sync power corporation presumes no respon sibility for the penalties of use of such information or for any vio lation of patents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise un der any patent or patent rights of sync power corpo ration. conditions mentioned in this publication are subject to change without notice. this publication surpasses and re places all information previously supplied. sync power corporation produc ts are not authorized for use as critical component s in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of s ync power corporation ?2013 sync power corporation C printed in taiwan C all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan 115 phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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